Effect of side gates doping on graphene self-switching nano-diode rectification
Author:
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/2053-1591/ab10d4/pdf
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1. Graphene ballistic nano-rectifier with very high responsivity
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3. Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature
4. A Molecular Diode with a Statistically Robust Rectification Ratio of Three Orders of Magnitude
5. Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers
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1. Rectification, transport properties of doped defective graphene nanoribbon junctions;Nanotechnology;2021-02-26
2. Large rectification ratio induced by nitrogen and boron doping in adjacent armchair graphene nanoribbons;Materials Letters;2020-08
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