Author:
Lee Eungkyu,Lee Jinwon,Kim Ji-Hoon,Lim Keon-Hee,Seok Byun Jun,Ko Jieun,Dong Kim Young,Park Yongsup,Kim Youn Sang
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Reference31 articles.
1. Sze, S. M. Physics of Semiconductor Devices Wiley (1981) .
2. Nicollian, E. H. & Brews, J. R. MOS Physics and Technology Wiley (1982) .
3. Robertson, J. High dielectric constant gate oxides for metal oxide Si transistors. Rep. Prog. Phys 69, 327–396 (2006) .
4. Lee, B. H. et al. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing. Appl. Phys. Lett. 76, 1926–1928 (2000) .
5. Lenzlinger, M. & Snow, E. H. Fowler-Nordheim tunneling into thermally grown SiO2 . J. Appl. Phys. 40, 278 (1969) .
Cited by
23 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献