Photoresist-Free Fully Self-Patterned Transparent Amorphous Oxide Thin-Film Transistors Obtained by Sol-Gel Process
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep04544.pdf
Reference32 articles.
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3. Nomura, K. et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488 (2004).
4. Park, J.-S. et al. Novel ZrInZnO Thin-film transistor with excellent stability. Adv. Mater. 21, 329 (2009).
5. Mativenga, M., Choi, J. W., Hur, J. H., Kim, H. J. & Jang, J. Highly stable amorphous-indium–gallium–zinc–oxide thin-film transistor using an etch stopper and a via-hole structure. J. Inf. Display 12, 47 (2011).
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