Optical gain in GaAsBi/GaAs quantum well diode lasers-Reference-Cited by-同舟云学术

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Optical gain in GaAsBi/GaAs quantum well diode lasers

Published:2016-07-01 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Marko Igor P.,Broderick Christopher A.,Jin Shirong,Ludewig Peter,Stolz Wolfgang,Volz Kerstin,Rorison Judy M.,O’Reilly Eoin P.,Sweeney Stephen J.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep28863.pdf

Reference37 articles.

1. Tixier, S. et al. Molecular beam epitaxy growth of GaAs1−xBix . Appl. Phys. Lett. 82, 2245 (2003).

2. Alberi, K. J. et al. Valence-band anticrossing in mismatched III-V semiconductor alloys. Phys. Rev. B 75, 045203 (2007).

3. Fluegel, B. et al. Giant Spin-Orbit Bowing in GaAs1−xBix . Phys. Rev. Lett. 97, 067205 (2006).

4. Batool, Z. et al. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing. J. Appl. Phys. 111, 113108 (2012).

5. Sweeney, S. J. & Jin, S. R. Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared. J. Appl. Phys. 113, 043110 (2013).

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