Interface Engineering to Create a Strong Spin Filter Contact to Silicon-Reference-Cited by-同舟云学术

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Interface Engineering to Create a Strong Spin Filter Contact to Silicon

Published:2016-03-15 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Caspers C.,Gloskovskii A.,Gorgoi M.,Besson C.,Luysberg M.,Rushchanskii K. Z.,Ležaić M.,Fadley C. S.,Drube W.,Müller M.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep22912.pdf

Reference37 articles.

1. Jansen, R., Dash, S. P., Sharma, S. & Min, B. C. Silicon spintronics with ferromagnetic tunnel devices. Semicond. Sci. Tech. 27, 083001 (2012).

2. Schmehl, A. et al. Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN. Nat. Mater. 6, 882–887 (2007).

3. Bader, S. D. & Parkin, S. S. P. Spintronics. Annu. Rev. Condens. Matt. 1, 71–88 (2010).

4. Müller, M., Luysberg, M. & Schneider, C. M. Observation of spin filtering in magnetic insulator contacts to silicon. Appl. Phys. Lett. 98, 142503 (2011).

5. Miao, G.-X., Münzenberg, M. & Moodera, J. S. Tunneling path toward spintronics. Rep. Prog. Phys. 74, 036501 (2011).

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