Band structure engineering via piezoelectric fields in strained anisotropic CdSe/CdS nanocrystals-Reference-Cited by-同舟云学术

Band structure engineering via piezoelectric fields in strained anisotropic CdSe/CdS nanocrystals

Published:2015-07-29 Issue:1 Volume:6 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Christodoulou Sotirios,Rajadell Fernando,Casu Alberto,Vaccaro Gianfranco,Grim Joel Q.,Genovese Alessandro,Manna Liberato,Climente Juan I.^ORCID,Meinardi Francesco,Rainò Gabriele,Stöferle Thilo,Mahrt Rainer F.,Planelles Josep,Brovelli Sergio,Moreels Iwan

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms8905.pdf

Reference61 articles.

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3. Coleman, J. J. Strained layer InGaAs quantum-well heterostructure lasers. IEEE J. Sel. Top. Quantum Electron. 6, 1008–1013 (2000) .

4. Zhang, F., Crespi, V. H. & Zhang, P. Prediction that uniaxial tension along 〈111〉 produces a direct band gap in germanium. Phys. Rev. Lett. 102, 156401 (2009) .

5. Sánchez-Pérez, J. R. et al. Direct-bandgap light-emitting germanium in tensilely strained nanomembranes. Proc. Natl Acad. Sci. USA 108, 18893–18898 (2011) .

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