Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams-Reference-Cited by-同舟云学术

Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams

Published:2016-08-02 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Iberi Vighter,Liang Liangbo,Ievlev Anton V.,Stanford Michael G.,Lin Ming-Wei,Li Xufan,Mahjouri-Samani Masoud,Jesse Stephen,Sumpter Bobby G.,Kalinin Sergei V.,Joy David C.,Xiao Kai,Belianinov Alex,Ovchinnikova Olga S.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep30481.pdf

Reference58 articles.

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3. Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J. & Hersam, M. C. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano 8, 1102–1120 (2014).

4. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnology 7, 699–712 (2012).

5. Bhimanapati, G. R. et al. Recent Advances in Two-Dimensional Materials Beyond Graphene. ACS Nano (2015).

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