Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep17103.pdf
Reference46 articles.
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5. Chen, A. Ionic memory technology. in Solid State Electro-chemistry II: Electrodes, Interfaces and Ceramic Membranes, 1st ed., Kharton, V. V. (ed.) (Wiley-VCH, Weinheim, 2011), doi: 10.1002/9783527635566.ch1
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