Engineering interfacial polarization switching in van der Waals multilayers-Reference-Cited by-同舟云学术

Engineering interfacial polarization switching in van der Waals multilayers

Published:2024-03-19 Issue:6 Volume:19 Page:751-757
ISSN:1748-3387
Container-title:Nature Nanotechnology
language:en
Short-container-title:Nat. Nanotechnol.

Author:

Van Winkle Madeline^ORCID,Dowlatshahi Nikita,Khaloo Nikta,Iyer Mrinalni^ORCID,Craig Isaac M.^ORCID,Dhall Rohan,Taniguchi Takashi^ORCID,Watanabe Kenji^ORCID,Bediako D. Kwabena^ORCID

Funder

National Science Foundation

U.S. Department of Energy

Gordon and Betty Moore Foundation

Canadian Institute for Advanced Research

U.S. Department of Defense

MEXT | Japan Society for the Promotion of Science

Publisher

Springer Science and Business Media LLC

Link

https://www.nature.com/articles/s41565-024-01642-0.pdf

Reference54 articles.

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2. Mikolajick, T., Schroeder, U. & Slesazeck, S. The past, the present, and the future of ferroelectric memories. IEEE Trans. Electron Devices 67, 1434–1443 (2020).

3. Li, L. & Wu, M. Binary compound bilayer and multilayer with vertical polarizations: two-dimensional ferroelectrics, multiferroics, and nanogenerators. ACS Nano 11, 6382–6388 (2017).

4. Yasuda, K., Wang, X., Watanabe, K., Taniguchi, T. & Jarillo-Herrero, P. Stacking-engineered ferroelectricity in bilayer boron nitride. Science 372, 1458–1462 (2021).

5. Vizner Stern, M. et al. Interfacial ferroelectricity by van der Waals sliding. Science 372, 1462–1466 (2021).

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