Affiliation:
1. School of Physics and Astronomy, Tel Aviv University, Israel.
2. Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel.
3. National Institute for Material Science, Tsukuba, Japan.
Abstract
Stacking a ferroelectric
Properties of layered van der Waals structures can depend sensitively on the stacking arrangement of constituent layers. This phenomenon has been exploited to engineer superconducting, correlated insulator, and magnetic states. Two groups now show that ferroelectricity can also be engineered through stacking: Parallel-stacked bilayers of hexagonal boron nitride exhibit ferroelectric switching even though the bulk material is not ferroelectric (see the Perspective by Tsymbal). To explore these phenomena, Yasuda
et al.
used transport measurements, whereas Vizner Stern
et al.
focused on atomic force microscopy.
Science
, abd3230 and abe8177, this issue p.
1458
and p.
1462
; see also abi7296, p.
1389
Funder
Army Research Office
Horizon 2020 Framework Programme
Japan Society for the Promotion of Science
Ministry of Education, Culture, Sports, Science, and Technology
Core Research for Evolutional Science and Technology, Japan Science and Technology Agency
Israel Science Foundation
Ministry of Science and Technology, Government of the People’s Republic of Bangladesh
Université de Sfax
Publisher
American Association for the Advancement of Science (AAAS)
Cited by
236 articles.
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