Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep34586.pdf
Reference31 articles.
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2. Mayarrd, D. S. et al. Asymmetry of carrier transport leading to efficiency droop in InGaN-based light emitting diode. Appl. Phys. Lett. 99, 251115 (2010).
3. Zhu, D. et al. Enhanced electron capture and symmetrized carrier distribution in InGaN light emitting diodes having tailored barrier doping. Appl. Phys. Lett. 96, 121110 (2010).
4. Shen, Y. C. et al. Auger recombination in InGaN measured by photoluminescence. Appl. Phys. Lett. 91, 141101 (2007).
5. Efremov, A. A. et al. Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs. Semiconductors 40, 605 (2006).
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