Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes-Reference-Cited by-同舟云学术

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Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

Published:2016-11-10 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Kim Jae-Keun,Cho Kyungjune,Kim Tae-Young,Pak Jinsu,Jang Jingon,Song Younggul,Kim Youngrok,Choi Barbara Yuri,Chung Seungjun,Hong Woong-Ki,Lee Takhee

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep36775.pdf

Reference54 articles.

1. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).

2. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013).

3. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).

4. Li, X., Wang, X., Zhang, L., Lee, S. & Dai, H. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science 319, 1229–1232 (2008).

5. Allen, M. J., Vincent C. T. & Richard B. K. Honeycomb carbon: a review of graphene. Chemical Reviews 110, 132–145 (2009).

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