Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep03249.pdf
Reference36 articles.
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3. Chang, W. Y. et al. Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications. Appl. Phys. Lett. 92, 022110 (2008).
4. Yoon, J. H. et al. Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots. Adv. Mater. 25, 1987–1992 (2013).
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