Abstract
AbstractSpintronics is expected to be the basis for future ultra-low-energy nanoelectronic devices. To operate such devices at room temperature, amplifiers, batteries, capacitors, as well as spin current sources are required. Here we report a chalcogenide superlattice composed of GeTe and Sb2Te3 layers that have a topologically protected spin diffusion length exceeding 100 μm at room temperature. A spin generator is demonstrated by combining magnetic injectors (TbFeCo) with this superlattice. The spin current was found to increase exponentially with the number of superlattice periods. We used this effect to demonstrate a 15-fold increase in the spin current. In addition, spin rectification is possible by growing the superlattice layers with atomic-level thickness accuracy. The reported chalcogenide superlattice spin generators and rectifiers open new opportunities to design low-energy spintronic integrated circuits and quantum computers.
Funder
MEXT | JST | Core Research for Evolutional Science and Technology
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
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