Evaluation of write error rate for voltage-driven dynamic magnetization switching in magnetic tunnel junctions with perpendicular magnetization-Reference-Cited by-同舟云学术

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Evaluation of write error rate for voltage-driven dynamic magnetization switching in magnetic tunnel junctions with perpendicular magnetization

Published:2015-12-10 Issue:1 Volume:9 Page:013001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Shiota Yoichi,Nozaki Takayuki,Tamaru Shingo,Yakushiji Kay,Kubota Hitoshi,Fukushima Akio,Yuasa Shinji,Suzuki Yoshishige

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Reference29 articles.

1. Current-driven excitation of magnetic multilayers

2. Emission of spin waves by a magnetic multilayer traversed by a current

3. Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

4. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

5. Impact of ultra low power and fast write operation of advanced perpendicular MTJ on power reduction for high-performance mobile CPU

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3. Probability distribution of write failure in a memory cell array consisting of magnetic tunnel junction elements with distributed write error rates;AIP Advances;2024-03-01

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5. Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepared by deposition at cryogenic temperatures;APL Materials;2023-12-01

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