Abstract
AbstractA new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally. The transconductance of the graphene channel is found to change its sign depending on the direction of spontaneous polarization (SP) in the underlying ferroelectric layer. This indicates that the memory state of FeRAM, specified by the SP direction of the ferroelectric layer, can be sensed unambiguously with transconductance measurements. With the proposed read-out method, it is possible to construct an array of ferroelectric memory cells in the form of a cross-point structure where the transconductance of a crossing cell can be measured selectively without any additional selector. This type of FeRAM can be a plausible solution for fabricating high speed, ultra-low power, long lifetime, and high density 3D stackable non-volatile memory.
Funder
Samsung
National Research Foundation of Korea
Samsung Research Funding & Incubation Center of Samsung Electronics: This is a branch of Samsung Electronics providing research fundings for technology innovation.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献