Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep31934.pdf
Reference35 articles.
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2. Yun, M. J. et al. Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells. J. Appl. Phys. 115, 094305 (2014).
3. Pan, F., Gao, S., Chen, C., Song, C. & Zeng, F. Recent progress in resistive random access memories: materials, switching mechanisms, and performance. Mater. Sci. Eng. R 83, 1–59 (2014).
4. Strukov, D. B., Snider, G. S., Stewart, D. R. & Williams, R. S. The missing memristor found. Nature 453, 80–83 (2008).
5. Yang, J. J. et al. Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3, 429–433 (2008).
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