Designing of Tunnel FET and FinFET using Sentaurus TCAD and Finding their Characteristics

Abstract

In this paper, a FinFET and Tunnel FET (TFET) are designed and implemented using Sentaurus TCAD. Due to numerous advantages, the TFET and FinFET have been proposed as a possible alternative to the conventional metal oxide semiconductor FET (MOSFET). A phenomenal performance-has been achieved using FinFET technology up to a 7 nm feature size. A detailed observation is made on FinFET and TFET regarding various effects such as short channel effects, quantum tunneling effect and characteristics like electric field, voltage and current, on-current, doping concentrations, energy band diagrams etc. FinFET technology can be used for designing different low power CMOS digital circuits and memory-based circuits. On the contrary, TFET based synthesized circuits are known for their high sensitivity, for which they are suitable for sensing applications, especially biosensors.