Improvement in analog/RF performances of SOI TFET using dielectric pocket
Author:
Affiliation:
1. Department of Electrical Engineering, National Institute of Technology Silchar, Assam, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217.2020.1756439
Reference26 articles.
1. Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
2. Performance Enhancement of Novel InAs/Si Hetero Double-Gate Tunnel FET Using Gaussian Doping
3. 30-nm Tunnel FET With Improved Performance and Reduced Ambipolar Current
4. Comparing Carbon Nanotube Transistors—The Ideal Choice: A Novel Tunneling Device Design
5. Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs
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