Crystallization of Amorphous Silicon Films with Native-Oxide Free Surfaces-Reference-Cited by-同舟云学术

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Crystallization of Amorphous Silicon Films with Native-Oxide Free Surfaces

Published:1991-12-05 Issue:12 Volume:59 Page:1043-1049
ISSN:0366-9297
Container-title:Denki Kagaku oyobi Kogyo Butsuri Kagaku
language:en
Short-container-title:Denki Kagaku1961

Author:

SAKAI Akira,TATSUMI Toru,NIINO Takeo,ONO Haruhiko,ISHIDA Koichi

Publisher

The Electrochemical Society of Japan

Subject

General Chemistry

Link

https://www.jstage.jst.go.jp/article/kogyobutsurikagaku/59/12/59_1043/_pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-pressure chemical vapour deposition of nanograin polysilicon ultra-thin films;Nanotechnology;2002-05-24

2. An advanced technique for fabricating hemispherical-grained (HSG) silicon storage electrodes;IEEE Transactions on Electron Devices;1995

3. Prevention of crystallization by surfactants during Si molecular-beam deposition on amorphous-Si films;Physical Review B;1993-03-15

4. Novel seeding method for the growth of polycrystalline Si films with hemispherical grains;Applied Physics Letters;1992-07-13

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