Effect of Hole Trapping on the Microscopic Structure of Oxygen Vacancy Sites in a-SiO2-Reference-Cited by-同舟云学术

Effect of Hole Trapping on the Microscopic Structure of Oxygen Vacancy Sites in a-SiO2

Published:2000-05-01 Issue:20 Volume:104 Page:4699-4703
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Pineda Andrew C.¹,Karna Shashi P.²

Affiliation:

1. Albuquerque High Performance Computing Center, The University of New Mexico, 1601 Central Avenue, NE (Galles Building), Albuquerque, New Mexico 87131

2. U.S. Air Force Research Laboratory, Space Vehicles Directorate, 3550 Aberdeen Avenue, SE, Building 914, KAFB, New Mexico 87117-5776

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp994160c

Reference17 articles.

1. Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides

2. Bulk oxide traps and border traps in metal–oxide–semiconductor capacitors

3. Oxygen vacancy model for the E1′ center in SiO2

4. Oxygen vacancy and theE1’center in crystallineSiO2

5. Structure and Hyperfine Parameters ofE1′Centers inα-Quartz and in VitreousSiO2

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