In situ Structural Characterization of Metal−Molecule−Silicon Junctions Using Backside Infrared Spectroscopy-Reference-Cited by-同舟云学术

In situ Structural Characterization of Metal−Molecule−Silicon Junctions Using Backside Infrared Spectroscopy

Published:2008-08-14 Issue:36 Volume:112 Page:14021-14026
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Scott Adina¹,Hacker Christina A.¹,Janes David B.¹

Affiliation:

1. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, 1205 West State Street, West Lafayette, Indiana 47907, and Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp801715s

Reference43 articles.

1. Molecular electronics: Some views on transport junctions and beyond

2. Energetics of molecular interfaces

3. Molecular wires and devices: Advances and issues

4. Self assembled monolayers on silicon for molecular electronics

5. Chemical reactivity of hydrogen-terminated crystalline silicon surfaces

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