Si−Ge-based Oxynitrides: From Molecules to Solids-Reference-Cited by-同舟云学术

Si−Ge-based Oxynitrides: From Molecules to Solids

Published:2010-06-03 Issue:13 Volume:22 Page:3884-3899
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Weng C.¹,Kouvetakis J.¹,Chizmeshya A. V. G.¹

Affiliation:

1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm903772n

Reference48 articles.

1. Akwani, I. A.; Bellman, R. A.; Grandi, T. P.; Sachenik, P. A.Germanium silicon oxynitride films with high refractive index for planar waveguides.PCT Int. Appl. (2001) , p25CODEN: PIXXD2, Patent WO2001034530 A1 2001051.

2. Optical loss mechanisms in GeSiON planar waveguides

3. Time-dependent diffusivity of boron in silicon oxide and oxynitride

4. Electronic structure and optical properties of α and β phases of silicon nitride, silicon oxynitride, and with comparison to silicon dioxide

5. Low-temperature synthesis/densification and properties of Si2N2O prepared with Li2O additive

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