Ultrathin All-2D Lateral Diodes Using Top and Bottom Contacted Laterally Spaced Graphene Electrodes to WS<sub>2</sub> Semiconductor Monolayers-Reference-Cited by-同舟云学术

Ultrathin All-2D Lateral Diodes Using Top and Bottom Contacted Laterally Spaced Graphene Electrodes to WS₂ Semiconductor Monolayers

Published:2023-03-28 Issue:14 Volume:15 Page:18012-18021
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Qianyang¹,Hou Linlin¹^ORCID,Shautsova Viktoryia¹,Warner Jamie H.²³^ORCID

Affiliation:

1. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K.

2. Materials Science and Engineering Graduate Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States

3. Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States

Funder

China Scholarship Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c22014

Reference35 articles.

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2. Electrical contacts to two-dimensional semiconductors

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4. Graphene/Semiconductor Hybrid Heterostructures for Optoelectronic Device Applications

5. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

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