Flexible Floating-Gate Electric-Double-Layer Organic Transistor for Neuromorphic Computing-Reference-Cited by-同舟云学术

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Flexible Floating-Gate Electric-Double-Layer Organic Transistor for Neuromorphic Computing

Published:2022-12-14 Issue:51 Volume:14 Page:57102-57112
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zheng Chaoyue¹²,Liao Yuan³,Wang Junjie²,Zhou Ye³^ORCID,Han Su-Ting²^ORCID

Affiliation:

1. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou313001, P.R. China

2. College of Electronics and Information Engineering, Shenzhen University, Shenzhen518060, P.R. China

3. Institute for Advanced Study, Shenzhen University, Shenzhen518060, P.R. China

Funder

Guangdong Science and Technology Department

Shenzhen Science and Technology Innovation Commission

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c20925

Reference46 articles.

1. Neuromorphic Engineering: From Biological to Spike‐Based Hardware Nervous Systems

2. Synaptic Resistors for Concurrent Inference and Learning with High Energy Efficiency

3. Organic electronics for neuromorphic computing

4. Photonics for artificial intelligence and neuromorphic computing

5. Flexible Neuromorphic Electronics for Computing, Soft Robotics, and Neuroprosthetics

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3. Achieving Reconfigurable Excitatory–Inhibitory Response in Unipolar Synaptic Memtransistors by the Synergistic Effects of Electric Double Layer and Charge Trapping;ACS Applied Electronic Materials;2024-04-11

4. Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor;International Journal of Extreme Manufacturing;2024-01-29

5. Recent progress of organic artificial synapses in biomimetic sensory neural systems;Journal of Materials Chemistry C;2024

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