High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing-Reference-Cited by-同舟云学术

High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing

Published:2022-05-23 Issue:21 Volume:14 Page:24602-24609
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Zijian¹,Guan Zeyu¹,Sun Haoyang¹,Luo Zhen¹,Zhao Haoyu¹,Wang He¹,Yin Yuewei¹^ORCID,Li Xiaoguang¹²^ORCID

Affiliation:

1. Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China

2. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Funder

Ministry of Science and Technology of the People's Republic of China

Central University Basic Research Fund of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c04441

Reference48 articles.

1. Nonvolatile Multistates Memories for High-Density Data Storage

2. Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer

3. Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

4. Opportunities and challenges for spintronics in the microelectronics industry

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