High-Performance Organic Source-Gated Transistors Enabled by the Indium-Tin Oxide–Diketopyrrolopyrrole Polymer Interface-Reference-Cited by-同舟云学术

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High-Performance Organic Source-Gated Transistors Enabled by the Indium-Tin Oxide–Diketopyrrolopyrrole Polymer Interface

Published:2023-02-17 Issue:8 Volume:15 Page:10918-10925
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Hyuna¹,Kim Yeo Eun¹,Bae Jisuk¹,Jung Sungyeop²,Sporea Radu A.³^ORCID,Kim Chang-Hyun¹^ORCID

Affiliation:

1. School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea

2. Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea

3. Advanced Technology Institute, School of Computer Science and Electronic Engineering, University of Surrey, Guildford GU2 7XH, Surrey, U.K.

Funder

Engineering and Physical Sciences Research Council

Royal Society

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c22350

Reference47 articles.

1. Brotherton, S. D. Introduction to Thin Film Transistors: Physics and Technology of TFTs; Springer, 2013; pp 453–480.

2. Source-gated thin-film transistors

3. Organic Electronic Devices and Their Functional Interfaces

4. Energetics of metal–organic interfaces: New experiments and assessment of the field

5. Thin-Film Transistors

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