Impedance characterization of dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene diodes: Addressing dielectric properties and trap effects

Abstract

Dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT) is a widely used small-molecular p-type organic semiconductor. Despite the broad availability of high-performance DNTT transistors, there is a lack of investigation into other devices based on this semiconductor. In this study, rectifying diodes with DNTT as a single transport medium are fabricated and characterized. Realizing unipolar current rectification from asymmetric metal contacts, a number of physical and electrical properties of DNTT are made accessible. Current–voltage measurement, broad-band impedance spectroscopy, drift-diffusion simulation, and equivalent-circuit modeling are combined to quantify important parameters such as dielectric constant, trap energy, and lifetime. These results provide a practical reference for the design and optimization of diverse electronic devices incorporating DNTT.