Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material-Reference-Cited by-同舟云学术

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Published:2023-03-15 Issue:12 Volume:15 Page:15668-15675
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zakay Noy¹²^ORCID,Schlesinger Adi³,Argaman Uri¹,Nguyen Long¹,Maman Nitzan²,Koren Bar¹²,Ozeri Meital⁴,Makov Guy¹²^ORCID,Golan Yuval¹²^ORCID,Azulay Doron³⁴^ORCID

Affiliation:

1. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel

2. Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel

3. Azrieli College of Engineering, Jerusalem 9103501, Israel

4. Racah Institute of Physics, The Hebrew University, Jerusalem 9190401, Israel

Funder

Israel Science Foundation

Azrieli college research fund

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c22134

Reference59 articles.

1. Defect Engineering in Ultrathin SnSe Nanosheets for High-Performance Optoelectronic Applications

2. Investigation of optical, electrical and optoelectronic properties of SnSe crystals

3. Tin Selenide (SnSe): Growth, Properties, and Applications

4. Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications

5. A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

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