A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells-Reference-Cited by-同舟云学术

A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

Published:2019 Issue:18 Volume:7 Page:11265-11271
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Mao Yuliang¹²³⁴^ORCID,Xu Congsheng¹²³⁴,Yuan Jianmei⁵⁶³⁴,Zhao Hongquan⁷⁸⁹⁴

Affiliation:

1. Hunan Key Laboratory for Micro-Nano Energy Materials and Devices

2. School of Physics and Optoelectronics

3. Xiangtan University

4. China

5. Hunan Key Laboratory for Computation and Simulation in Science and Engineering

6. School of Mathematics and Computational Science

7. Chongqing Institute of Green and Intelligent Technology

8. Chinese Academy of Sciences

9. Chongqing 401120

Abstract

Based on first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has a type-II band alignment and a direct band gap. The predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TA/C9TA01219B

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