Iron(III) Dopant Counterions Affect the Charge-Transport Properties of Poly(Thiophene) and Poly(Dialkoxythiophene) Derivatives

Author:

Al Kurdi Khaled1,Gregory Shawn A.2ORCID,Gordon Madeleine P.34,Ponder Jr James F.5ORCID,Atassi Amalie2ORCID,Rinehart Joshua M.2ORCID,Jones Austin L.1,Urban Jeffrey J.4ORCID,Reynolds John R.12ORCID,Barlow Stephen1ORCID,Marder Seth R.12,Yee Shannon K.5ORCID

Affiliation:

1. School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

2. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

3. Applied Science and Technology Graduate Group, University of California, Berkeley, California 94720, United States

4. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

5. George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Funder

Office of Naval Research

U.S. Department of Education

National Science Foundation

Division of Materials Research

Link Energy Foundation

Science and Technology of Advanced Materials and Interfaces, Georgia Institute of Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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