Radical n–p Conduction Switching and Significant Photoconductivity Enhancement in NbOI<sub>2</sub> via Pressure-Modulated Peierls Distortion-Reference-Cited by-同舟云学术

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Radical n–p Conduction Switching and Significant Photoconductivity Enhancement in NbOI₂ via Pressure-Modulated Peierls Distortion

Published:2024-08-28 Issue:36 Volume:146 Page:25245-25252
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Yue Lei¹,Li Zonglun¹²³^ORCID,Yu Linchao¹,Xu Kunbo¹,Liu Ran¹,Li Chenyi¹,Li Yanchun⁴,Yang Dongliang⁴,Li Xiaodong⁴^ORCID,Li Quanjun¹^ORCID,Liu Bingbing¹^ORCID

Affiliation:

1. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China

2. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

3. Spallation Neutron Source Science Center, Dongguan 523803, China

4. Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.4c09361

Reference41 articles.

1. P‐Type 2D Semiconductors for Future Electronics

2. Two-dimensional semiconductors for transistors

3. Promises and prospects of two-dimensional transistors

4. Selenium-alloyed tellurium oxide for amorphous p-channel transistors

5. Two-Dimensional Violet Phosphorus: A p-Type Semiconductor for (Opto)electronics

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