Carrier-Induced Defect Saturation in Green InGaN LEDs: A Potential Phenomenon to Enhance Efficiency at Higher Wavelength Regime-Reference-Cited by-同舟云学术

Carrier-Induced Defect Saturation in Green InGaN LEDs: A Potential Phenomenon to Enhance Efficiency at Higher Wavelength Regime

Published:2021-02-23 Issue:3 Volume:8 Page:926-932
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Nag Dhiman¹^ORCID,Aggarwal Tarni¹^ORCID,Sinha Shreekant²,Sarkar Ritam¹,Bhunia Swagata³,Chen Yi-Fan⁴,Ganguly Swaroop¹^ORCID,Saha Dipankar¹,Horng Ray-Hua⁴^ORCID,Laha Apurba¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India

2. Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan

3. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India

4. Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

Funder

Ministry of Electronics and Information technology

Ministry of Human Resource Development

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.0c01969

Reference38 articles.

1. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

2. Triaxially uniform high-quality Al x Ga(1−x)N (x ∼ 50%) nanowires on template free sapphire substrate

3. Decomposition Resilience of GaN Nanowires, Crested and Surficially Passivated by AlN

4. GaN-based green laser diodes

5. The Green Laser Diode: Completing the Rainbow

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