Decomposition Resilience of GaN Nanowires, Crested and Surficially Passivated by AlN-Reference-Cited by-同舟云学术

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Decomposition Resilience of GaN Nanowires, Crested and Surficially Passivated by AlN

Published:2020-07-08 Issue:8 Volume:20 Page:4867-4874
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Bhunia Swagata¹²,Sarkar Ritam²,Nag Dhiman²,Ghosh Kankat³,Khiangte Krista R.¹,Mahapatra Suddhasatta¹^ORCID,Laha Apurba²^ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology Bombay, Mumbai-400076, India

2. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India

3. Department of Electrical Engineering, Indian Institute of Technology Jammu, Jammu and Kashmir-181221, India

Funder

University Grants Commission

Ministry of Electronics and Information technology

Science and Engineering Research Board

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.0c00316

Reference43 articles.

1. High-Efficiency InGaN/GaN Dot-in-a-Wire Red Light-Emitting Diodes

2. High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

3. Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum Dot

4. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

5. GaN-Based RF Power Devices and Amplifiers

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1. Role of Ga-flux in indium incorporation and emission properties of self-assembled InGaN nanowires grown on Si (111);Materials Science in Semiconductor Processing;2024-09

2. Ultrafast green single photon emission from an InGaN quantum dot-in-a-GaN nanowire at room temperature;Applied Physics Letters;2024-07-22

3. Gallium Controlled Optical Emission Under In-Rich Regime in Self-Assembled Ingan Nanowires Grown on Si(111);2024

4. Reshaping of 3D GaN Structures during Annealing: Phenomenological Description and Mathematical Model;Crystal Growth & Design;2023-11-28

5. Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires;Nanotechnology;2023-09-01

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