Optoelectronic Mixing in High-Mobility Graphene-Reference-Cited by-同舟云学术

Optoelectronic Mixing in High-Mobility Graphene

Published:2020-12-30 Issue:1 Volume:8 Page:369-375
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Hamidouche L.¹^ORCID,Montanaro A.¹,Rosticher M.²,Grimaldi E.¹,Poupet B.¹,Taniguchi T.³^ORCID,Watanabe K.³^ORCID,Plaçais B.²,Baudin E.²,Legagneux P.¹

Affiliation:

1. Thales Research & Technology, 1 Avenue Fresnel, 91767 Palaiseau, France

2. Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Sorbonne Paris Cité, 24 Rue Lhomond, 75005 Paris, France

3. Advanced Materials Laboratory, National Institute of Materials Science, Tsukuba, Ibaraki 305−0047, Japan

Funder

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.0c01679

Reference28 articles.

1. Measurement of the Optical Conductivity of Graphene

2. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

3. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

4. Graphene microwave transistors on sapphire substrates

5. Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substrates

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