Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation
Author:
Affiliation:
1. Department of Mechanical Engineering, Material Science and Engineering Program, Texas Center for Superconductivity at UH (TcSUH), and Advanced Manufacturing Institute (AMI), University of Houston, Houston, Texas 77204-4006, United States
Funder
King Abdullah University of Science and Technology
King Abdulaziz City for Science and Technology
Texas Center for Superconductivity, University of Houston
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.8b00538
Reference65 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides
2. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells
3. Kneissl, M.; Rass, J. III-Nitride Ultraviolet Emitters; Springer: Switzerland, 2016; Chapter 1, pp 1–25.
4. Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure
5. Fundamental Limitations of Wide-Bandgap Semiconductors for Light-Emitting Diodes
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