CMOS-Compatible PECVD Silicon Carbide Platform for Linear and Nonlinear Optics-Reference-Cited by-同舟云学术

CMOS-Compatible PECVD Silicon Carbide Platform for Linear and Nonlinear Optics

Published:2019-03-05 Issue:5 Volume:6 Page:1162-1167
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Xing Peng¹^ORCID,Ma Danhao²,Ooi Kelvin J. A.³,Choi Ju Won¹,Agarwal Anuradha Murthy⁴,Tan Dawn¹

Affiliation:

1. SUTD−MIT International Design Center, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372

2. Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

3. School of Electrical and Computer Engineering, Xiamen University Malaysia, Jalan Sunsuria, Bandar Sunsuria, 43900 Sepang, Selangor Darul Ehsan, Malaysia

4. Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Funder

Ministry of Education - Singapore

National Research Foundation Singapore

SUTD-MIT International Design Centre

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.8b01468

Reference42 articles.

1. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

2. Bright room temperature single photon source at telecom range in cubic silicon carbide

3. Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam

4. Two-photon absorption and Kerr coefficients of silicon for 850–2200nm

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