Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam-Reference-Cited by-同舟云学术

Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam

Published:2017-05-01 Issue:5 Volume:4 Page:1054-1059
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Wang Junfeng,Zhang Xiaoming,Zhou Yu,Li Ke,Wang Ziyu,Peddibhotla Phani,Liu Fucai¹,Bauerdick Sven²,Rudzinski Axel²,Liu Zheng¹^ORCID,Gao Weibo³^ORCID

Affiliation:

1. Center for Programmable Materials, School of Materials Science & Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

2. Raith GmbH, 44263 Dortmund, Germany

3. MajuLab, CNRS-University of Nice-NUS-NTU International Joint Research Unit UMI, Singapore 3654, Singapore

Funder

Agency for Science, Technology and Research

Ministry of Education - Singapore

National Research Foundation Singapore

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.7b00230

Reference29 articles.

1. Room temperature coherent control of defect spin qubits in silicon carbide

2. Polytype control of spin qubits in silicon carbide

3. Coherent control of single spins in silicon carbide at room temperature

4. Isolated electron spins in silicon carbide with millisecond coherence times

5. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

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