Benchmarking the Use of Heavily Doped Ge for Plasmonics and Sensing in the Mid-Infrared-Reference-Cited by-同舟云学术

Benchmarking the Use of Heavily Doped Ge for Plasmonics and Sensing in the Mid-Infrared

Published:2018-07-25 Issue:9 Volume:5 Page:3601-3607
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Pellegrini Giovanni¹^ORCID,Baldassare Leonetta²^ORCID,Giliberti Valeria³,Frigerio Jacopo⁴,Gallacher Kevin⁵,Paul Douglas J.⁵,Isella Giovanni⁴,Ortolani Michele²^ORCID,Biagioni Paolo¹^ORCID

Affiliation:

1. Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy

2. Dipartimento di Fisica, Sapienza Università di Roma, Piazzale Aldo Moro 5, I-00185 Rome, Italy

3. Center for Life Nano Sciences, Istituto Italiano di Tecnologia, Viale Regina Elena 291, I-00185 Rome, Italy

4. L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como, Italy

5. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom

Funder

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.8b00438

Reference40 articles.

1. Searching for better plasmonic materials

2. Infrared surface plasmons on heavily doped silicon

3. Low-Loss Plasmonic Metamaterials

4. Infrared plasmons on heavily-doped silicon

5. All-Semiconductor Plasmonic Nanoantennas for Infrared Sensing

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