Energy Transport State Resolved Raman for Probing Interface Energy Transport and Hot Carrier Diffusion in Few-Layered MoS2
Author:
Affiliation:
1. Department of Mechanical Engineering, Iowa State University, Ames, Iowa 50011, United States
2. School of Energy and Power Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China
Funder
U.S. Department of Energy
Division of Civil, Mechanical and Manufacturing Innovation
Division of Chemical, Bioengineering, Environmental, and Transport Systems
Iowa Energy Center
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.7b00815
Reference68 articles.
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4. Thermal Transport across Solid Interfaces with Nanoscale Imperfections: Effects of Roughness, Disorder, Dislocations, and Bonding on Thermal Boundary Conductance
5. The hot carrier diffusion coefficient of sub-10 nm virgin MoS2: uncovered by non-contact optical probing
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