The hot carrier diffusion coefficient of sub-10 nm virgin MoS2: uncovered by non-contact optical probing
Author:
Funder
National Science Foundation
U.S. Department of Energy
Iowa Energy Center
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR02089A
Reference58 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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3. Graphene-Based Materials: Synthesis, Characterization, Properties, and Applications
4. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
5. Atomically ThinMoS2: A New Direct-Gap Semiconductor
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