Subquantum-Well Influence on Carrier Dynamics in High Efficiency DUV Dislocation-Free AlGaN/AlGaN-Based Multiple Quantum Wells
Author:
Affiliation:
1. Physics Department, Faculty of Science, Taif University, 21974 Taif, P.O. Box 888, Saudi Arabia
2. Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Funder
King Abdullah University of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
http://pubs.acs.org/doi/pdf/10.1021/acsphotonics.9b01814
Reference62 articles.
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3. Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design
4. High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation
5. Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission
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