100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore
2. National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China
Funder
Ministry of Education - Singapore
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.2c01878
Reference56 articles.
1. Gated photodetector based on GaN/AlGaN heterostructure field effect transistor
2. Recent advances in ultraviolet photodetectors
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5. Wide-bandgap semiconductor ultraviolet photodetectors
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