Bi<sub>2</sub>S<sub>3</sub>Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors-Reference-Cited by-同舟云学术

Bi₂S₃Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors

Published:2023-01-09 Issue:7 Volume:10 Page:2226-2233
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Yang Ji¹,Lv Yifei¹,He Ziyang²,Wang Binbin²,Chen Shiwu¹,Xiao Feng¹,Hu Huicheng¹,Yu Mengxuan²,Liu Huan²³⁴^ORCID,Lan Xinzheng¹²³⁴,Hsu Hsien-Yi⁵^ORCID,Song Haisheng¹²³⁴^ORCID,Tang Jiang¹²³⁴^ORCID

Affiliation:

1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei430074, People’s Republic of China

2. School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei430074, People’s Republic of China

3. Optics Valley Laboratory, Wuhan, Hubei430074, People’s Republic of China

4. Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang325035, People’s Republic of China

5. School of Energy and Environment & Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong999077, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Optics Valley Laboratory

Wenzhou City

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.2c01145