Synthesis of Atomically Thin Transition Metal Disulfides for Charge Transport Layers in Optoelectronic Devices-Reference-Cited by-同舟云学术

Synthesis of Atomically Thin Transition Metal Disulfides for Charge Transport Layers in Optoelectronic Devices

Published:2015-03-25 Issue:4 Volume:9 Page:4146-4155
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kwon Ki Chang¹,Kim Cheolmin²,Le Quyet Van²,Gim Seungo³,Jeon Jong-Myeong¹,Ham Ju Young³,Lee Jong-Lam³,Jang Ho Won¹,Kim Soo Young²

Affiliation:

1. Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea

2. School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul 156-756, Republic of Korea

3. Department of Materials Science, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Republic of Korea

Funder

Samsung

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b01504

Reference32 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

3. Highly Efficient Electrocatalytic Hydrogen Production by MoSxGrown on Graphene-Protected 3D Ni Foams

4. Synthesis of Surface-Functionalized WS2 Nanosheets and Performance as Li-Ion Battery Anodes

5. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

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