Electrical Transport Properties of Polymorphic MoS2
Author:
Affiliation:
1. Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
2. Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
Funder
Ministry of Trade, Industry and Energy
Institute for Basic Science
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b02267
Reference51 articles.
1. First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers
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3. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
4. Atomically ThinMoS2: A New Direct-Gap Semiconductor
5. The reflectivity spectra of some group VA transition metal dichalcogenides
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