Metal chalcogenide nanorings for temperature–strain dual-mode sensing-Reference-Cited by-同舟云学术

Metal chalcogenide nanorings for temperature–strain dual-mode sensing

Published:2024 Issue:7 Volume:16 Page:3484-3491
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Xiaoshan¹²³,Zhang Jinhao¹,Liu Peiyuan³,Wei Danlin²,Tian Daobo²,Liu Shipeng³,Chen Qian³,Cao Jiacheng³,Wang Zhiwei¹³,Huang Xiao¹^ORCID

Affiliation:

1. Institute of Advanced Materials (IAM), School of Flexible Electronics (SoFE), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China

2. Ningxia Key Laboratory of Photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan 750021, China

3. Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China

Abstract

Sn0.2Mo0.8S2 nanorings with a mixed 1T/2H phase were synthesized by etching SnS2 cores from Sn1−xMoxS2/SnS2 lateral heterostructures. Flexible electronic sensors based on these nanorings exhibited excellent temperature and strain sensing performance.

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR05561B

Reference46 articles.

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2. Active pixel sensor matrix based on monolayer MoS2 phototransistor array

3. Composition and phase engineering of metal chalcogenides and phosphorous chalcogenides

4. MXenes for Plasmonic Photodetection

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