Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors-Reference-Cited by-同舟云学术

Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors

Published:2019-10-29 Issue:11 Volume:13 Page:13413-13420
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Patil Prasanna D.¹^ORCID,Ghosh Sujoy¹,Wasala Milinda¹^ORCID,Lei Sidong²³,Vajtai Robert²^ORCID,Ajayan Pulickel M.²^ORCID,Ghosh Arindam⁴⁵,Talapatra Saikat¹

Affiliation:

1. Department of Physics, Southern Illinois University Carbondale, Carbondale, Illinois 62901, United States

2. Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States

3. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States

4. Department of Physics, Indian Institute of Science, Bangalore 560012, India

5. Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India

Funder

Army Research Office

Indo-US Science and Technology Forum

Graduate School, Southern Illinois University Carbondale

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b06846

Reference66 articles.

1. Scaling of an anomalous metal-insulator transition in a two-dimensional system in silicon atB=0

2. Electric Field Scaling at aB=0Metal-Insulator Transition in Two Dimensions

3. Metal-Insulator Transition in Two Dimensions: Effects of Disorder and Magnetic Field

4. Conductor-Insulator Quantum Phase Transitions

5. Strongly Correlated Electrons in Two Dimensions

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