Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect-Reference-Cited by-同舟云学术

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Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect

Published:2015-08-26 Issue:9 Volume:9 Page:9276-9283
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Huang Pu¹,Zong Hua¹,Shi Jun-jie¹,Zhang Min²,Jiang Xin-he¹,Zhong Hong-xia¹,Ding Yi-min¹,He Ying-ping¹,Lu Jing¹,Hu Xiao-dong¹

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People’s Republic of China

2. College of Physics and Electronic Information, Inner Mongolia Normal University, Hohhot 010022, People’s Republic of China

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b04158

Reference51 articles.

1. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

2. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

3. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

4. InGaN/GaN multiple quantum well concentrator solar cells

5. How Nanowires Grow

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3. Growth mechanism and electronic properties of stacking mismatch boundaries in wurtzite III-nitride material;Physical Review B;2023-04-24

4. Fabrication of composition-controlled MOCVD grown InxGa1-xN based MSM photodetectors;Optical Materials;2023-02

5. Impact of Ga and N Vacancies at the GaN m -Plane on the Carrier Dynamics of Micro-Light-Emitting Diodes;Physical Review Applied;2023-01-06

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