Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors-Reference-Cited by-同舟云学术

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors

Published:2015-12-04 Issue:1 Volume:10 Page:1118-1125
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Pezeshki Atiye¹,Hosseini Shokouh Seyed Hossein¹,Jeon Pyo Jin¹,Shackery Iman¹,Kim Jin Sung¹,Oh Il-Kwon¹,Jun Seong Chan¹,Kim Hyungjun¹,Im Seongil¹

Affiliation:

1. Institute of Physics and Applied Physics, ‡School of Mechanical Engineering, and §School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b06419

Reference40 articles.

1. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

2. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

3. Exfoliated multilayer MoTe2 field-effect transistors

4. Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors

5. Molybdenum Disulfide Nanoflake–Zinc Oxide Nanowire Hybrid Photoinverter

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